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Spectroscopy, imaging, and sensing using terahertz radiation|6 Article(s)
Modeling the THz spectrum of the bentazon
Huali Wang, and Qiang Wang
Terahertz (THz) spectra of bentazon are determined within the range of 0.3 2.4 THz at room temperature. Density functional methods are used to compute the THz spectra using three different programs: Gaussian03 for isolated-molecule form, DMol3 and CRYSTAL09 for solid-state forms. Among the three, the computed THz spectrum of CRYSTAL09 shows better bond length and angle agreements with X-ray experimental results, and corresponds with observed THz experiment spectral characteristics. The isolated-molecule vibrational mode values are less by half than those derived from solid-state calculations. The last five peak positions of the two solid-state computations coincide with each other. Moreover, all the experimental THz absorption peaks are assigned by utilizing CRYSTAL09. Terahertz (THz) spectra of bentazon are determined within the range of 0.3 2.4 THz at room temperature. Density functional methods are used to compute the THz spectra using three different programs: Gaussian03 for isolated-molecule form, DMol3 and CRYSTAL09 for solid-state forms. Among the three, the computed THz spectrum of CRYSTAL09 shows better bond length and angle agreements with X-ray experimental results, and corresponds with observed THz experiment spectral characteristics. The isolated-molecule vibrational mode values are less by half than those derived from solid-state calculations. The last five peak positions of the two solid-state computations coincide with each other. Moreover, all the experimental THz absorption peaks are assigned by utilizing CRYSTAL09.
Chinese Optics Letters
- Publication Date: Oct. 24, 2011
- Vol. 9, Issue 11, 110011 (2011)
Diffusion interaction and quantitative analysis of zinc dialkyldithiophosphate content in lube base oils in terahertz regime
Lu Tian, Kun Zhao, Qingli Zhou, Yulei Shi, Dongmei Zhao, Cunlin Zhang, and Songqing Zhao
We investigate the diffusion interaction and quantitative analysis of zinc dialkyldithiophosphate (ZDDP) mixed with lube base oil (LBO) at different concentrations using terahertz time-domain spectroscopy (THz-TDS). When the concentration exceeds 6.78%, the characteristic absorption peaks exhibit significantly shift, and the absorption coefficient peak value is nonlinear against concentration. Moreover, the absorption coefficients of mixed samples follow the Beer's law at a concentration below 6.78%. The quantitative analysis enables a strategy for monitoring the formulation of lubricating oil in real time. We investigate the diffusion interaction and quantitative analysis of zinc dialkyldithiophosphate (ZDDP) mixed with lube base oil (LBO) at different concentrations using terahertz time-domain spectroscopy (THz-TDS). When the concentration exceeds 6.78%, the characteristic absorption peaks exhibit significantly shift, and the absorption coefficient peak value is nonlinear against concentration. Moreover, the absorption coefficients of mixed samples follow the Beer's law at a concentration below 6.78%. The quantitative analysis enables a strategy for monitoring the formulation of lubricating oil in real time.
Chinese Optics Letters
- Publication Date: Oct. 25, 2011
- Vol. 9, Issue 11, 110010 (2011)
High sensitivity and high selectivity terahertz biomedical imaging (Invited Paper)
Seongsin M., William Baughman, David S., Lee Butler, Michael Bolus, Soner Balci, and Patrick Kung
We demonstrate two distinct emerging terahertz (THz) biomedical imaging techniques. One is based on the use of a new single frequency THz quantum cascade laser and the other is based on broadband THz time domain spectrocopy. The first method is employed to derive a metastasis lung tissue imaging at 3.7 THz with clear contrast between cancerous and healthy areas. The second approach is used to study an osseous tissue under several imaging modalities and achieve full THz spectroscopic imaging based on the frequency domain or on a fixed THz propagation time-delay. Sufficient contrast is achieved which facilitated the identification of regions with different cellular types and density compositions. We demonstrate two distinct emerging terahertz (THz) biomedical imaging techniques. One is based on the use of a new single frequency THz quantum cascade laser and the other is based on broadband THz time domain spectrocopy. The first method is employed to derive a metastasis lung tissue imaging at 3.7 THz with clear contrast between cancerous and healthy areas. The second approach is used to study an osseous tissue under several imaging modalities and achieve full THz spectroscopic imaging based on the frequency domain or on a fixed THz propagation time-delay. Sufficient contrast is achieved which facilitated the identification of regions with different cellular types and density compositions.
Chinese Optics Letters
- Publication Date: Sep. 30, 2011
- Vol. 9, Issue 11, 110009 (2011)
Broadband terahertz spectroscopy (Invited Paper)
Wenhui Fan
An overview of the major techniques to generate and detect THz radiation so far, especially the major approaches to generate and detect coherent ultra-short THz pulses using ultra-short pulsed laser, has been presented. And also, this paper, in particularly, focuses on broadband THz spectroscopy and addresses on a number of issues relevant to generation and detection of broadband pulsed THz radiation as well as broadband time-domain THz spectroscopy (THz-TDS) with the help of ultra-short pulsed laser. The time-domain waveforms of coherent ultra-short THz pulses from photoconductive antenna excited by femtosecond laser with different pulse durations and their corresponding Fourier-transformed spectra have been obtained via the numerical simulation of ultrafast dynamics between femtosecond laser pulse and photoconductive material. The origins of fringes modulated on the top of broadband amplitude spectrum, which is measured by electric-optic detector based on thin nonlinear crystal and extracted by fast Fourier transformation, have been analyzed and the major solutions to get rid of these fringes are discussed. An overview of the major techniques to generate and detect THz radiation so far, especially the major approaches to generate and detect coherent ultra-short THz pulses using ultra-short pulsed laser, has been presented. And also, this paper, in particularly, focuses on broadband THz spectroscopy and addresses on a number of issues relevant to generation and detection of broadband pulsed THz radiation as well as broadband time-domain THz spectroscopy (THz-TDS) with the help of ultra-short pulsed laser. The time-domain waveforms of coherent ultra-short THz pulses from photoconductive antenna excited by femtosecond laser with different pulse durations and their corresponding Fourier-transformed spectra have been obtained via the numerical simulation of ultrafast dynamics between femtosecond laser pulse and photoconductive material. The origins of fringes modulated on the top of broadband amplitude spectrum, which is measured by electric-optic detector based on thin nonlinear crystal and extracted by fast Fourier transformation, have been analyzed and the major solutions to get rid of these fringes are discussed.
Chinese Optics Letters
- Publication Date: Oct. 24, 2011
- Vol. 9, Issue 11, 110008 (2011)
Terahertz electromagnetic waves emitted from semiconductor investigated using terahertz time domain spectroscopy (Invited Paper)
Yiming Zhu, and Songlin Zhuang
Ultrafast electromagnetic waves radiated from semiconductor material under high electric fields and photoexcited by femtosecond laser pulses have been recorded by using terahertz time domain spectroscopy (THz-TDS). The waveforms of these electromagnetic waves reflect the dynamics of the photoexcited carriers in the semiconductor material, thus, THz-TDS provides a unique opportunity to observe directly the temporal and spatial evolutions of non-equilibrium transport of carriers within sub-picosecond time scale. We report on the observed THz emission waveforms emitted from GaAs by using a novel technology, the time domain THz electro-optic (EO) sampling, which has a bipolar feature, i.e., an initial positive peak and a subsequent negative dip that arises from its velocity overshoot. The initial positive peak has been interpreted as electron acceleration in the bottom of valley in GaAs, where electrons have a light effective mass. The subsequent negative dip has been attributed to intervalley transfer from to X and L valleys. Furthermore, the power dissipation spectra of the bulk GaAs in THz range are also investigated by using the Fourier transformation of the time domain THz traces. From the power dissipation spectra, the cutoff frequency for negative power dissipation (i.e., gain) under step electric field in the bulk GaAs can also be obtained. The cutoff frequency for the gain gradually increases with increasing electric fields up to 50 kV/cm and achieves saturation at approximately 1 THz at 300 K. Furthermore, based on the temperature dependence of the cutoff frequency, we find that this cutoff frequency is governed by the energy relaxation process of electrons from L to valley via successive optical phonon emission. Ultrafast electromagnetic waves radiated from semiconductor material under high electric fields and photoexcited by femtosecond laser pulses have been recorded by using terahertz time domain spectroscopy (THz-TDS). The waveforms of these electromagnetic waves reflect the dynamics of the photoexcited carriers in the semiconductor material, thus, THz-TDS provides a unique opportunity to observe directly the temporal and spatial evolutions of non-equilibrium transport of carriers within sub-picosecond time scale. We report on the observed THz emission waveforms emitted from GaAs by using a novel technology, the time domain THz electro-optic (EO) sampling, which has a bipolar feature, i.e., an initial positive peak and a subsequent negative dip that arises from its velocity overshoot. The initial positive peak has been interpreted as electron acceleration in the bottom of valley in GaAs, where electrons have a light effective mass. The subsequent negative dip has been attributed to intervalley transfer from to X and L valleys. Furthermore, the power dissipation spectra of the bulk GaAs in THz range are also investigated by using the Fourier transformation of the time domain THz traces. From the power dissipation spectra, the cutoff frequency for negative power dissipation (i.e., gain) under step electric field in the bulk GaAs can also be obtained. The cutoff frequency for the gain gradually increases with increasing electric fields up to 50 kV/cm and achieves saturation at approximately 1 THz at 300 K. Furthermore, based on the temperature dependence of the cutoff frequency, we find that this cutoff frequency is governed by the energy relaxation process of electrons from L to valley via successive optical phonon emission.
Chinese Optics Letters
- Publication Date: Sep. 27, 2011
- Vol. 9, Issue 11, 110007 (2011)
Applications of time-resolved terahertz spectroscopy in ultrafast carrier dynamics (Invited Paper)
Qingli Zhou, and Xicheng Zhang
Three time-resolved terahertz (THz) spectroscopy methods (optical-pump/THz-probe spectroscopy, THz-pump/THz-probe spectroscopy, and THz-pump/optical-probe spectroscopy) are reviewed. These are used to characterize ultrafast dynamics in photo- or THz-excited semiconductors, superconductors, nanomaterials, and other materials. In particular, the optical-pump/THz-probe spectroscopy is utilized to investigate carrier dynamics and the related intervalley scattering phenomena in semiconductors. The recent development of intense pulsed THz sources is expected to affect the research in nonlinear THz responses of various materials. Three time-resolved terahertz (THz) spectroscopy methods (optical-pump/THz-probe spectroscopy, THz-pump/THz-probe spectroscopy, and THz-pump/optical-probe spectroscopy) are reviewed. These are used to characterize ultrafast dynamics in photo- or THz-excited semiconductors, superconductors, nanomaterials, and other materials. In particular, the optical-pump/THz-probe spectroscopy is utilized to investigate carrier dynamics and the related intervalley scattering phenomena in semiconductors. The recent development of intense pulsed THz sources is expected to affect the research in nonlinear THz responses of various materials.
Chinese Optics Letters
- Publication Date: Sep. 30, 2011
- Vol. 9, Issue 11, 110006 (2011)
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